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부품번호 | NDS9405 기능 |
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기능 | Single P-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | ETC | ||
로고 | |||
전체 6 페이지수
N
NDS9405
Single P-Channel Enhancement Mode Field Effect Transistor
February 1996
General Description
These P-Channel enhancement mode power field effect
transistors are produced using National's proprietary, high cell
density, DMOS technology. This very high density process is
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
Features
-4.3A, -20V. RDS(ON) = 0.10Ω @ VGS = -10V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used
surface mount package.
____________________________________________________________________________________
54
63
72
81
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed
TA = 25°C
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
NDS9405
-20
± 20
± 4.3
± 3.3
± 20
2.5
1.2
1
-55 to 150
50
25
Units
V
V
A
W
°C
°C/W
°C/W
NDS9405.SAM
Typical Electrical Characteristics
-20
VGS = -10V - 6.0- 5.0 - 4.5
-15
- 4.0
-10 - 3.5
-5 - 3.0
0
0 -1 -2 -3 -4
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
-5
3
V GS = -3.5V
2.5
-4.0V
2
-4.5V
1.5 -5.0V
-6.0V
1 -10V
0.5
0
-3 -6 -9 -12
ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
-15
1.5
1.4 ID = -4.3A
V GS = -10V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100
TJ , JUNCTION TEMPERATURE (°C)
125
Figure 3. On-Resistance Variation
with Temperature.
150
2.5
TJ = 25°C
2
1.5
1
V GS = -4.5V
V GS = -10V
0.5
0
-3 -6 -9 -12
ID , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation
with Drain Current.
-15
20
V DS = -10V
TJ = -55°C
25
125
16
12
8
4
0
12345
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
1.1
1.05
1
V DS = V GS
I D = -250µA
0.95
0.9
0.85
0.8
0.75
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation
with Temperature.
NDS9405.SAM
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부품번호 | 상세설명 및 기능 | 제조사 |
NDS9400A | Single P-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDS9405 | Single P-Channel Enhancement Mode Field Effect Transistor | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |