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FDP054N10 데이터시트 PDF




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부품번호 FDP054N10 기능
기능 N-Channel PowerTrench MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDP054N10 데이터시트, 핀배열, 회로
FDP054N10
N-Channel PowerTrench® MOSFET
100 V, 144 A, 5.5 mΩ
November 2013
Features
• RDS(on) = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP054N10
100
±20
144
102
120
576
1153
6
263
1.75
-55 to +175
300
FDP054N10
0.57
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
1
www.fairchildsemi.com




FDP054N10 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-80
* Notes :
1. VGS = 0V
2. ID = 10mA
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
1000
Figure 8. On-Resistance Variation
vs. Temperature
2.4
2.0
1.6
1.2
0.8
0.4
-80
* Notes :
1. VGS = 10V
2. ID = 75A
-40 0 40 80 120 160 200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
150
100
100 μs
10
THIS AREA IS
LIMITED BY rDS(on)
DC
1
SINGLE PULSE
TJ = MAX RATED
1 ms
RθJc = 0.57 oC/W
TC = 25 oC
10 ms
100 ms
0.1
0.1 1 10 100 400
VDS, DRAIN to SOURCE VOLTAGE (V)
100
Limitted by package
50
0
25 50 75 100 125 150 175
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
Single pulse
0.001
10-5
10-4
PDM
* Notes :
t1
t2
1. ZθJC(t) = 0.57oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
Rt1e, cRteacntganuglaurlaPruPlusleseDDuuraratitoionn[[sseecc]]
1
10
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
4
www.fairchildsemi.com

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FDP054N10 전자부품, 판매, 대치품
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Non Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-0R3
©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
7
www.fairchildsemi.com

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부품번호상세설명 및 기능제조사
FDP054N10

N-Channel PowerTrench MOSFET

Fairchild Semiconductor
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