AUIRFS4010 Datasheet PDF - International Rectifier
| Part Number | AUIRFS4010 | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
| Logo |  |
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AUTOMOTIVE GRADE
PD - 96396A
AUIRFS4010
Features
AUIRFSL4010
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
3.9m:
:G max. 4.7m
S ID
180A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
D
S
G
D2Pak
AUIRFS4010
D
S
D
G
TO-262
AUIRFSL4010
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
180
127
720
375
2.5
± 20
318
See Fig. 14, 15, 22a, 22b
31
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
jkRθJC Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
|
| |
 
1000
100 TJ = 175°C
TJ = 25°C
10
VGS = 0V
1.0
0.2 0.6 1.0 1.4 1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
Fig 9. MaxTimC u, CmasDerTaeinmpCeurartruerent(°vCs).
Case Temperature
175
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
10000
1000
AUIRFS/SL4010
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
1msec
10msec
100μsec
10
DC
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
130
Id = 5mA
125
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP
12.5A
17A
BOTTOM 106A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AUIRFS4010 electronic component. |
| Information | Total 13 Pages | |
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| Download | [ AUIRFS4010.PDF Datasheet ] | |
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