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PDF 2SJ271 Data sheet ( Hoja de datos )

Número de pieza 2SJ271
Descripción P-Channel Silicon MOS FET
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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2SJ271
P- Channel Silicon MOS FET
Very High-Speed Switching Applications
Features and Applications
• Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (D.C)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP PW10µS, dutycycle1%
PD Tc=25°C
Tch
Tstg
--100
±15
--15
--60
70
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Gate to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(OFF)
| yfs |
RDS(On)1
RDS(On)1
Ciss
Coss
Crss
td(On)
tr
td(Off)
tf
VSD
ID=--1mA , VGS=0
ID=±100µA , VGS=0
VDS=--100V , VGS=0
VGS=±12V , VDS=0
VDS=--10V , ID=--1mA
VDS=--10V , ID=--8A
ID=--8A , VGS=--10V
ID=--8A , VGS=--4V
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
VDS=--20V , f=1MHz
See Specified Test
Circuit .
IS =--15A , VGS = 0
unit
V
V
A
A
W
°C
°C
min
--100
±15
typ
--1.0
7.5 13
0.12
0.16
1900
400
80
18
25
300
120
--1.0
max
--100
±10
--2.0
0.16
0.22
--1.5
unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
Switching Time Test Circuit
VIN
0V
--10V
PW=10uS
D.C1%
VIN
VDD=--50V
ID=--8A
RL=--6.25
VOUT
P.G 50
Elecrical Connection
D
G
S
Case Outline TO-220 (unit:mm)
10.0
φ3.2
4.5
2.8
1.6
1.2
0.75
123
2.55 2.55
2.4
0.7
Specifications and information herein are subject to change without notice.
1 : Gate
2 : Drain
2.55 2.55 3 : Source
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990929TM2fXHD

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