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PDF IRF7739L2PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7739L2PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
IRF7739L2PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
40V min ±20V max 0.70mΩ@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
Applicable DirectFET Outline and Substrate Outline
SB SC
M2
M4
L8 DirectFET ISOMETRIC
L4 L6 L8
The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Part number
Package Type
IRF7739L2TRPbF DirectFET2 Large Can
IRF7739L2TR1PbF DirectFET2 Large Can
Standard Pack
Form
Q uan tity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
10
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
0.93
ID = 160A
0.92
8 0.91
6 TJ = 25°C
0.90
0.89
4 0.88
VGS = 10V
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
Max.
40
±20
270
190
46
375
1070
270
160
80 120
Units
V
A
mJ
A
160 200
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014
1 page  
1000
TJ = 175°C
100
10000
1000
IRF7739L2PbF
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10 TJ = 25°C
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
300
100 1msec
DC 10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
5.0
4.5
250
4.0
200
3.5
150 3.0
2.5
100 ID = 250µA
2.0 ID = 1.0mA
50 1.5 ID = 1.0A
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
1100
1000
900
800
ID
TOP 29A
46A
BOTTOM 160A
700
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014
5 Page 
IRF7739L2PbF
Qualification Information†
Qualification level
Industrial ††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
Moisture Sensitivity Level
DFET2
MSL1
RoHS Compliant
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
2/12/2014
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
• Updated data sheet with new IR corporate template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF7739L2PBF.PDF ] | |
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