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NP161N04TUG 데이터시트 PDF




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부품번호 NP161N04TUG 기능
기능 N-CHANNEL POWER MOS FET
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NP161N04TUG 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP161N04TUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP161N04TUG-E1-AY Note
NP161N04TUG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
TO-263-7pin (MP-25ZT) typ. 1.5 g
FEATURES
Super low on-state resistance
RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX. (VGS = 10 V, ID = 80 A)
High Current Rating
ID(DC) = ±160 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±160
±640
250
1.8
175
55 to +175
70
650
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch = 150°C, VDD = 25 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.6
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19411EJ1V0DS00 (1st edition)
Date Published August 2008 NS
Printed in Japan
2008




NP161N04TUG pdf, 반도체, 판매, 대치품
NP161N04TUG
700
600
500
400
300
200
100
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
0.5 1 1.5
VDS - Drain to Source Voltage - V
2
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175
Tch - Channel Temperature - °C
225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
3
VGS = 10 V
2.5 Pulsed
2
1.5
1
0.5
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = 55°C
10 25°C
25°C
1 75°C
125°C
0.1
150°C
175°C
0.01
VDS = 10 V
Pulsed
0.001
0123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
Tch = 55°C
100
25°C
25°C
10
1
0.1
0.1
75°C
125°C
150°C
175°C
VDS = 5 V
Pulsed
1 10 100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
ID = 80 A
5 Pulsed
4
3
2
1
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
4 Data Sheet D19411EJ1V0DS

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NP161N04TUG 전자부품, 판매, 대치품
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
NP161N04TUG
Draw-out side
Reel side
MARKING INFORMATION
NEC
161N04
UG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP161N04TUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Recommended
Condition Symbol
IR60-00-3
P350
Data Sheet D19411EJ1V0DS
7

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NP161N04TUG

N-CHANNEL POWER MOS FET

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