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PDF LN2312LT3G Data sheet ( Hoja de datos )

Número de pieza LN2312LT3G
Descripción 20V N-Channel Enhancement-Mode MOSFET
Fabricantes LRC　
Logotipo LRC Logotipo



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No Preview Available ! LN2312LT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
●APPLICATIONS
1)Advanced trench process technology
2)High Density Cell Design For Ultra Low On-Resistance
3)We declare that the material of product compliant with RoHS
requirements and Halogen Free
●FEATURES
1)VDS= 20V
2)RDS(ON), [email protected], [email protected] = 41m Ω
3)RDS(ON), [email protected], [email protected] = 47m Ω
LN2312LT1G
3
1
2
SOT– 23 (TO–236AB)
3D
●DEVICE MARKING AND ORDERING INFORMATION
Device
LN2312LT1G
LN2312LT3G
Marking
N12
N12
Shipping
3000/Tape&Reel
10000/Tape&Reel
G
1
S
2
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note
3),VGS@4.5V
TA=25℃
TA=70℃
Pulsed Drain Current (Note1,2)
Maximum Power Dissipation
Operating and Storage Temperature Range
Symbol Limits Unit
VDSS
20
V
VGS ±8 V
4.9
ID A
3.4
IDM 15 A
PD 0.75 W
TJ, Tstg –55 to +150 °C
●THERMAL DATA
Parameter
Symbol
Thermal Resistance Junction-ambient(Note 3)
Rthj-a
1. Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Surface mounted on 1 in2 copper PCB board
Limits
140
Unit
°C/W
July , 2015
Rev .A 1/5

1 page




LN2312LT3G pdf
LESHAN RADIO COMPANY, LTD.
LN2312LT1G
A
L
3
BS
12
VG
C
D
H
K
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
J L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
0.037
0.95
0.035
0.9
0.037
0.95
0.079
2.0
0.031
0.8
inches
mm
July , 2015
Rev .A 5/5

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