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PDF FCI25N60N_F102 Data sheet ( Hoja de datos )
| Número de pieza | FCI25N60N_F102 | |
| Descripción | N-Channel SupreMOS MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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March 2013
FCI25N60N_F102
N-Channel SupreMOS® MOSFET
600 V, 25 A, 125 mΩ
Features
• RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 262 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s next-
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiate it from
the conventional MOSFETs. This advanced technology and pre-
cise process control provide lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applica-
tions such as PFC, server/telecom power, FPD TV power, ATX
power and industrial power applications.
D
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (TC = 25oC)
Continuous (TC = 100oC)
Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
S
(Note 1)
(Note 2)
(Note 3)
FCI25N60N_F102
600
±30
25
16
75
861
8.3
2.2
15
100
216
1.72
-55 to +150
300
FCI25N60N_F102
0.58
0.5
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FCI25N60N_F102 Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCI25N60N_F102 Rev. C0
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCI25N60N_F102.PDF ] | |
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