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IRF3710SPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF3710SPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRF3710SPBF 자료 제공

부품번호 IRF3710SPBF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


IRF3710SPBF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRF3710SPBF 데이터시트, 핀배열, 회로
IRF3710SPbF
IRF3710LPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 23m
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak
TO-262
IRF3710SPbF IRF3710LPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V‡
Continuous Drain Current, VGS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
57
40
180
200
1.3
± 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2013




IRF3710SPBF pdf, 반도체, 판매, 대치품
IRF3710S/LPbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
12
ID = 28A
10
VDS = 80V
VDS = 50V
VDS = 20V
7
5
2
0
0 20 40 60 80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000.00
100.00
10.00
TJ = 175°C
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.5 1.0 1.5
VSD, Source-toDrain Voltage (V)
2.0
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.01 0.1
1
10msec
DC
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2013

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IRF3710SPBF 전자부품, 판매, 대치품
IRF3710S/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
- „+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2013

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IRF3710SPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

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