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부품번호 | K3302 기능 |
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기능 | Silicon N Channel MOS Type Field Effect Transistor | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 6 페이지수
2SK3302
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3302
Switching Regulator and DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 11.5 Ω (typ.)
• High forward transfer admittance: |Yfs| = 0.4 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
0.5
1.5
1.3
14.3
0.5
0.13
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8MIB
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch-a)
96.1
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 100 mH, RG = 25 Ω, IAR = 0.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-06
RDS (ON) – Ta
40
Common source
VGS = 10 V
32 Pulse test
24
ID = 0.1 A
16
0.5 0.25
8
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
Capacitance – VDS
300
100 Ciss
50
30
10 Coss
5
Common source
3 VGS = 0 V
f = 1 MHz
1 Ta = 25°C
0.1 0.3 0.5
1
3 5 10
Crss
30 50 100
Drain-source voltage VDS (V)
2SK3302
1
Common source
0.5 Tc = 25°C
0.3 Pulse test
IDR – VDS
0.1
0.05
0.03
0.01
0
10
3
1
VGS = 0, −1 V
0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V)
1.2
Vth – Ta
5
Common source
VDS = 10 V
4 ID = 1 mA
Pulse test
3
2
1
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
PD – Ta
1.6
1.2
0.8
0.4
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
500 20
Common source
400 VDD = 100 V
VDS
ID = 0.5 A
Ta = 25°C
Pulse test
16
300
200 400
12
200 8
VGS
100
4
00
0 2 4 6 8 10
Total gate charge Qg (nC)
4 2006-11-06
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부품번호 | 상세설명 및 기능 | 제조사 |
K330 | LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE | Knox Inc |
K3302 | Silicon N Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |