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VS-80APF12-M3 데이터시트 PDF




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부품번호 VS-80APF12-M3 기능
기능 Fast Soft Recovery Rectifier Diode
제조업체 Vishay
로고 Vishay 로고


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VS-80APF12-M3 데이터시트, 핀배열, 회로
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 80 A
3
2
1
TO-247AC
Base
cathode
+
2
1
Anode -
3
- Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-247AC
80 A
1000 V, 1200 V
1.35 V
1250 A
90 ns
150 °C
Single die
0.5
FEATURES
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-80APF1... soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Sinusoidal waveform
1 A, - 100 A/μs
40 A, TJ = 25 °C
VOLTAGE RATINGS
PART NUMBER
VS-80APF10PbF, VS-80APF10-M3
VS-80APF12PbF, VS-80APF12-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
VALUES
1000/1200
80
1250
90
1.2
-40 to 150
UNITS
V
A
ns
V
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
IRRM
AT 150 °C
mA
15
Revision: 06-Feb-14
1 Document Number: 93725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-80APF12-M3 pdf, 반도체, 판매, 대치품
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 25 °C
10 TJ = 150 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
800
700 TJ = 25 °C
600
500
IFM = 80 A
400
300 IFM = 20 A
IFM = 40 A
200
100
0
0
IFM = 1 A
40 80
IFM = 10 A
120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
1800
1600
1400
TJ = 150 °C
1200
1000
800
600
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
400
200
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
12 000
10 000
TJ = 25 °C
IFM = 80 A
8000
6000
IFM = 40 A
4000
2000
0
0
IFM = 20 A
IFM = 10 A
IFM = 1 A
40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
25 000
20 000
TJ = 150 °C
IFM = 80 A
15 000
IFM = 40 A
10 000
IFM = 20 A
5000
IFM = 10 A
IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 06-Feb-14
4 Document Number: 93725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-80APF12-M3 전자부품, 판매, 대치품
www.vishay.com
Outline Dimensions
Vishay Semiconductors
TO-247
DIMENSIONS in millimeters and inches
B
(2) R/2
Q
2xR
(2)
(3)
E
N
S
D
12
3
(5) L1
CL
2 x b2
3xb
0.10 M C A M
2x e
b4
See view B
A
A2
A
D
A
C
A1
A
(6) Φ P
Ø KM DBM
D2
(Datum B)
Φ P1
Thermal pad
D1 (4)
4
(4)
E1
0.01 M D B M
View A - A
Plating
(b1, b3, b5)
Base metal
(c) c1
D DE E
CC
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
NOTES
MIN. MAX.
A 4.65 5.31 0.183 0.209
A1 2.21 2.59 0.087 0.102
D2 0.51 1.30 0.020 0.051
E
15.29 15.87 0.602 0.625
3
A2 1.50 2.49 0.059 0.098
E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055
e
5.46 BSC
0.215 BSC
b1 0.99 1.35 0.039 0.053
Ø K 2.54
0.010
b2 1.65 2.39 0.065 0.094
b3 1.65 2.34 0.065 0.092
L 14.20 16.10 0.559 0.634
L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135
N 7.62 BSC
0.3
b5 2.59 3.38 0.102 0.133
Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035
Ø P1
- 6.98 - 0.275
c1 0.38 0.84 0.015 0.033
D
19.71 20.70 0.776 0.815
3
Q 5.31 5.69 0.209 0.224
R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 -
4
S
5.51 BSC
0.217 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c
Revision: 07-Apr-15
1 Document Number: 95223
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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부품번호상세설명 및 기능제조사
VS-80APF12-M3

Fast Soft Recovery Rectifier Diode

Vishay
Vishay

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