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FCA20N60S_F109 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FCA20N60S_F109은 전자 산업 및 응용 분야에서
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부품번호 FCA20N60S_F109 기능
기능 N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FCA20N60S_F109 데이터시트, 핀배열, 회로
FCA20N60S / FCA20N60S_F109
600V N-Channel MOSFET
August 2007
SuperFETTM
Features
• 650V @TJ = 150°C
• Typ. Rds(on)=0.22
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
GDS
TO-3P
FCA Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2007 Fairchild Semiconductor Corporation
FCA20N60S / FCA20N60S_F109 REV. A2
1
G
S
FCA20N60S
600
20
12.7
60
± 30
450
20
26
4.5
260
2.1
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCA20N60S
0.48
41.7
Unit
°C/W
°C/W
www.fairchildsemi.com




FCA20N60S_F109 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0 V
2. ID = 250 µA
-50 0
50 100 150
T , Junction Temperature [oC]
J
200
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10 V
2. ID = 10 A
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R
DS(on)
102
101
100
10 us
100 us
1 ms
10 ms
DC
* Notes :
10-1 1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101 102
V , Drain-Source Voltage [V]
DS
103
Figure 11. Transient Thermal Response Curve
100
25
20
15
10
5
0
25 50 75 100 125
T , Case Temperature [oC]
C
D =0.5
1 0 -1
0.2
0.1
0.05
0.02
0.01
1 0 -2
single pulse
* N otes :
1. Z (t) = 0.48oC /W M ax.
θJC
2. D uty Factor, D =t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q uare W ave P ulse D uration [sec]
1
101
150
FCA20N60S / FCA20N60S_F109 REV. A2
4
www.fairchildsemi.com

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FCA20N60S_F109 전자부품, 판매, 대치품
Mechanical Dimensions
ø3.20 ±0.10
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
TO-3P
4.80 ±0.20
1.50
+0.15
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
1.40 ±0.20
0.60
+0.15
–0.05
FCA20N60S / FCA20N60S_F109 REV. A2
7
Dimensions in Millimeters
www.fairchildsemi.com

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N-Channel MOSFET

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