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FDH210N08 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FDH210N08은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FDH210N08 자료 제공

부품번호 FDH210N08 기능
기능 N-Channel UniFET MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FDH210N08 데이터시트, 핀배열, 회로
FDH210N08
N-Channel UniFETTM MOSFET
75 V, 210 A, 5.5 mΩ
Features
• RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A
• Low Gate Charge (Typ. 232 nC)
• Low Crss (Typ. 262 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
December 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
MaximumLead Temperature for Soldering,
1/8 from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
1
S
FDH210N08
75
210
132
840
± 20
9375
210
46.2
4.5
462
3.7
-55 to +175
300
FDH210N08
0.27
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
www.fairchildsemi.com




FDH210N08 pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
1.2 3.0
2.5
1.1
2.0
1.0 1.5
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 1mA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10V
2. ID = 125A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
104
103 30 µs
100 µs
102
1 ms
101 Operation in This Area
is Limited by R DS(on)
10 ms
100
10-1
10-2
100
DC
* Notes :
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
1
250
200
150
100 Limited by Package
50
0
25 50 75 100 125 150
TC, Case Temperature[oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
175
D = 0.5
0.1
0.2
0.1
0.05
0.01 0.02
0.01
0.001
10-5
Single pulse
* Notes :
1. ZθJC(t) = 0.27oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4 10-3 10-2 10-1 100 101
t,
1
Rectangular
Pulse
Duration
[sec]
Figure 11. Transient Thermal Response Curve
102
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
4
www.fairchildsemi.com

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FDH210N08 전자부품, 판매, 대치품
Mechanical Dimensions
Figure 16. TO-247, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
7
www.fairchildsemi.com

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관련 데이터시트

부품번호상세설명 및 기능제조사
FDH210N08

N-Channel UniFET MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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