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부품번호 | FDH210N08 기능 |
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기능 | N-Channel UniFET MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FDH210N08
N-Channel UniFETTM MOSFET
75 V, 210 A, 5.5 mΩ
Features
• RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A
• Low Gate Charge (Typ. 232 nC)
• Low Crss (Typ. 262 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
December 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-247
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25oC)
- Derate Above 25oC
Operating and Storage Temperature Range
MaximumLead Temperature for Soldering,
1/8 from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
1
S
FDH210N08
75
210
132
840
± 20
9375
210
46.2
4.5
462
3.7
-55 to +175
300
FDH210N08
0.27
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
1.2 3.0
2.5
1.1
2.0
1.0 1.5
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 1mA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10V
2. ID = 125A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
104
103 30 µs
100 µs
102
1 ms
101 Operation in This Area
is Limited by R DS(on)
10 ms
100
10-1
10-2
100
DC
* Notes :
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
1
250
200
150
100 Limited by Package
50
0
25 50 75 100 125 150
TC, Case Temperature[oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
175
D = 0.5
0.1
0.2
0.1
0.05
0.01 0.02
0.01
0.001
10-5
Single pulse
* Notes :
1. ZθJC(t) = 0.27oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-4 10-3 10-2 10-1 100 101
t,
1
Rectangular
Pulse
Duration
[sec]
Figure 11. Transient Thermal Response Curve
102
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
4
www.fairchildsemi.com
4페이지 Mechanical Dimensions
Figure 16. TO-247, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2007 Fairchild Semiconductor Corporation
FDH210N08 Rev. C0
7
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDH210N08 | N-Channel UniFET MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |