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AUIRF3710ZS 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRF3710ZS은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AUIRF3710ZS 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


AUIRF3710ZS 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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AUIRF3710ZS 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
PD - 97470
AUIRF3710Z
AUIRF3710ZS
Features
O Low On-Resistance
O 175°C Operating Temperature
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description
www.DataSheetS4pUe.ccoifmically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
S
TO-220AB
AUIRF3710Z
D2Pak
AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
59 A
42
240
160 W
Linear Derating Factor
1.1 W/°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
± 20
170
200
See Fig.12a,12b,15,16
-55 to + 175
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
kMounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.92
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
3/19/10




AUIRF3710ZS pdf, 반도체, 판매, 대치품
AUIRF3710Z/S
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
www.DataSheet4U.com
0.1
0.01
0.1
4.5V
20μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
20μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
1 TJ = 25°C
VDS = 25V
20μs PULSE WIDTH
0
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
120
100 TJ = 25°C
80
TJ = 175°C
60
40
20
0
0
VDS = 15V
20μs PULSE WIDTH
10 20 30 40 50 60
ID, Drain-to-Source Current (A)
70
Fig 3. Typical Transfer Characteristics
4
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com

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AUIRF3710ZS 전자부품, 판매, 대치품
AUIRF3710Z/S
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
www.DataSheetF4Uig.c1o2ma. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
QG
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
300
ID
250 TOP 15A
25A
BOTTOM 35A
200
150
100
50
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
5.0
4.0
3.0 ID = 250μA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
AUIRF3710Z

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
AUIRF3710ZS

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

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