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부품번호 | AO3702 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Alpha & Omega Semiconductors | ||
로고 | |||
AO3702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3702/L uses advanced trench technology to provide
excellent RDS(ON), low gate charge.
A Schottky diode is provided to facilitate the implementation of
a bidirectional blocking switch, or for DC-DC conversion
applications. AO3702 and AO3702L are electrically identical.
-RoHs Complaint
-AO3702L is Halogen Free
Features
VDS (V) = 20V
ID = 3.5A (VGS = 4.5V)
RDS(ON) < 62mΩ (VGS = 4.5V)
RDS(ON) < 70mΩ (VGS = 2.5V)
RDS(ON) < 85mΩ (VGS = 1.8V)
SCHOTTKY
SOT-23-5
Top View
G 15 D
S2
A 34 K
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
Schottky reverse voltage
VKA
Continuous Forward Current A
TA=25°C
TA=70°C
IF
Pulsed Forward Current B
IFM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
DK
SA
MOSFET
20
±8
3.5
2.7
25
1.15
0.7
-55 to 150
Typ
80.3
117
43
153
173
103
Schottky
20
1
0.5
10
0.66
0.42
-55 to 150
Max
110
150
80
190
220
140
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4 IVDDIV=DS3D==S.215=.0A12V0AV
400
350
300
3
2 VGS=4.5V, ID=1.8A
1 VGS=2.5V, ID=1.7A
VGS=1.8V, ID=1A
0 VGS=1.5V, ID=1A
0 0.5 1 1.5 2 2.5 3 3.5
Qg (nC)
Figure 7: Gate-Charge Characteristics
250
200
150
100
50
0
0
Ciss
Coss
Crss
5 10
VDS (Volts)
Figure 8: Capacitance Characteristics
15
100.0
10.0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10us
100us
1.0 10s 1ms
DC 10ms
1s
100ms
0.1
0.1 1
10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
20
TJ(Max)=150°C
16 TA=25°C
12
8
4
0
0.001 0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=150°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
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부품번호 | 상세설명 및 기능 | 제조사 |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |