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Número de pieza | AOL1422 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOL1422 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOL1422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1422 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is ESD protected and it is
suitable for use in load switching and general
purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Ultra SO-8TM Top View
Features
VDS (V) = 30V
ID = 85A
(VGS = 10V)
RDS(ON) < 3.7mΩ (VGS = 10V)
RDS(ON) < 5.4mΩ (VGS = 4.5V)
Rg,Ciss,Coss,Crss Tested
D
S
G
D
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current B,H
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current G
TA=25°C
TA=70°C
IDSM
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
85
150
19
15
100
50
2.08
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19.6
50
0.9
Max
25
60
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page AOL1422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 100
100 80
80
60
60
40
40
20 20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Power De-rating (Note B)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Current De-rating (Note B)
175
1000
100
TJ(Max)=150°C
TA=25°C
10
1
0.001
0.01 0.1 1 10 100
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
150
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
1000
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOL1422.PDF ] |
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