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PDF AOL1436 Data sheet ( Hoja de datos )
| Número de pieza | AOL1436 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1436
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1436 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics. This device is ideally suite
for use as a High side switch in CPU core power
conversion.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) < 6mΩ (VGS = 20V)
RDS(ON) < 8.2mΩ (VGS = 12V)
RDS(ON) < 11.5mΩ (VGS = 10V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
S
G
D
Bottom tab
connected to
drain
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain CurrentC
VGS
ID
IDM
Continuous Drain
Current A
Avalanche CurrentC
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mHC
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
t ≤ 10s
Steady-State
Symbol
RθJA
Maximum Junction-to-CaseD
Steady-State
RθJC
Maximum
25
±30
50
48
120
15
12
28
118
43
22
2.3
1.4
-55 to 175
Typ
20
46
2.5
Max
25
55
3.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page  
AOL1436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 50
TA=25°C
80 40
60
25°C
30
40 150°C
20
20 10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
80
60
40
20
0
0.001 0.01
0.1 1
10
Pulse Width (s)
100
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
1000
0.1
0.01
Single Pulse
0.001
0.00001
0.0001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOL1436.PDF ] | |
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