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Número de pieza | AOL1702 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOL1702 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! AOL1702
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AOL1702 uses advanced trench technology with
a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
Features
VDS (V) = 30V
ID =70A (VGS = 10V)
RDS(ON) < 5.8mΩ (VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S
G
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
CurrentA
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
D SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Maximum
30
±12
70
52
100
14
11
30
135
58
29
2.1
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
50
2.1
Max
25
60
2.6
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page AOL1702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160 80
120
TA=25°C
80
TA=150°C
40
60
40
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
80
TJ(Max)=150°C
TA=25°C
60
40
20
0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AOL1702.PDF ] |
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