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STPR2010CT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STPR2010CT
기능 Ultra Fast Recovery Diodes
제조업체 Sirectifier
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STPR2010CT 데이터시트, 핀배열, 회로
STPR2010CT thru STPR2020CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
STPR2010CT
STPR2020CT
VRRM
V
100
200
VRMS
V
70
140
VDC
V
100
200
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Ratings
20
125
Unit
A
A
Maximum Forward Voltage At
VF Pulse Width=300us
2% Duty Cycle
IF=10A
IF=10A
IF=20A
IF=20A
@TJ=25oC
@TJ=125oC
@TJ=25oC
@TJ=125oC
1.1
1.0
1.25
1.20
V
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=100oC
5
100
CJ Typical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance (Note 3)
TJ, TSTG Operating And Storage Temperature Range
100
35
1.5
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
uA
pF
ns
oC/W
oC






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관련 데이터시트

부품번호상세설명 및 기능제조사
STPR2010CT

Ultra Fast Recovery Diodes

Sirectifier
Sirectifier

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