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PDF IXGR50N90B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGR50N90B2D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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IXGR 50N90B2D1
HiPerFASTTM
IGBT with Fast
Diode
IXGR 50N90B2D1
B2-Class High Speed IGBT
with Fast Diode
(Electrically Isolated Back Surface)
VCES
IC25
VCE(sat)
tfi typ
= 900 V
= 40 A
= 2.9 V
= 200 ns
Symbol
Test Conditions
VCES
V
CGR
VGES
VGEM
IC25
IC110
I
F110
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C (IGBT)
TC = 110°C (diode)
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 720V
PC TC = 25°C
TJ
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
FC
Weight
50/60 Hz, RMS, t = 1ms
Mounting force (PLUS247)
Maximum Ratings
900 V
900 V
± 20
± 30
V
V
40 A
19 A
22 A
200 A
ICM = 100
A
100
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
2500
20..120 / 4.5..25
ISOPLUS247 5
V
N/lb
g
ISOPLUS247 (IXGR)
E153432
G
C
E
ISOLATED TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
Electrically isolated tab
International standard package outline
High current handling capability
MOS Gate turn-on
Drive simplicity
Rugged NPT structure
UL recognized
Molding epoxies meet UL 94V-0
flammability classification
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
V
GE(th)
IC = 250 μA, VCE = VGE
I
CES
IGES
V
CE(sat)
VCE = VCES
VGE = 0 V
TJ = 150°C
VCE = 0 V, VGE = ± 20 V
IC = ITT,JV=GE1=251°5CV, Note 1, 2
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
50 μA
1 mA
± 100 nA
2.2 2.9 V
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
© 2006 IXYS All rights reserved
DS99528(03/06)
1 page  
IXGR 50N90B2D1
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
600
550 td(off)
tfi - - - - - -
500 RG = 5 Ω
450 VGE = 15V
IC = 25A
50A
100A
400 VCE = 720V
350
300
250 IC = 100A
200 50A
25A
150
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
Fig. 15. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
10
0
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 14. Gate Charge
15
13.5
12
10.5
VCE = 450V
I C = 50A
I G= 10mA
9
7.5
6
4.5
3
1.5
0
0 20 40 60 80 100 120 140
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
110
100
90
80
70
60
50
40
30 TJ = 125ºC
20 RG = 10Ω
10 dV/dT < 10V/ns
0
100 200 300 400 500 600 700 800 900
VC E - Volts
1
10
Fig. 17. Maxim um Transient Therm al Resistance
Fig. 17. Maximum Transient Thermal Resistance
1
0.1
0.1
0.010.01
0.1 0.1
© 2006 IXYS All rights reserved
11
10 10
PuPlsuelsWeidWthid-tmh i-llismeiclliosnedcs onds
100 100
1000
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGR50N90B2D1.PDF ] | |
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