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부품번호 | IXGH40N120B2D1 기능 |
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기능 | High Voltage IGBTs | ||
제조업체 | IXYS | ||
로고 | |||
전체 7 페이지수
High Voltage IGBTs
w/Diode
IXGH40N120B2D1
IXGT40N120B2D1
VCES = 1200V
IC110 = 40A
VCE(sat) ≤ 3.5V
tfi(typ) = 140ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
=
=
25°C (Limited
110°C
by
Lead)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1200
1200
± 20
± 30
75
40
25
200
V
V
V
V
A
A
A
A
ICM = 80
@ 0.8 ≤ VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
6g
4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 40A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
100 μA
3 mA
±100 nA
2.9 3.5 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
z International Standard Packages
z IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
z Square RBSOA
z Fast Recovery Expitaxial Diode
(FRED)
- Soft Recovery with Low IRM
Advantages
z High Power Density
z Low Gate Drive Requirement
© 2009 IXYS CORPORATION, All RrightsRreserved
DS99555B(02/09)
IXGH40N120B2D1
IXGT40N120B2D1
Fig. 7. Transconductance
55
50
45
40
35
30
25
20
15
10
5
0
0
TJ = - 40ºC
25ºC
125ºC
10 20 30 40 50 60 70 80 90 100 110 120
IC - Amperes
Fig. 8. Gate Charge
16
14 VCE = 600V
I C = 40A
12 I G = 10 mA
10
8
6
4
2
0
0 20 40 60 80 100 120 140
QG - NanoCoulombs
10,000
f = 1 MHz
1,000
100
Fig. 9. Capacitance
Cies
Coes
Cres
10
0
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
90
80
70
60
50
40
30
20 TJ = 125ºC
RG = 2Ω
10 dV / dt < 10V / ns
0
200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
1 10
IXYS REF: G_40N120B2(6ZC) 3-30-06
4페이지 60
A
50
IF 40
30
TVJ=150°C
TVJ=100°C
20
10
TVJ=25°C
0
0 1 2 3V
VF
Fig. 21. Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40 80 120 °C 160
TVJ
Fig. 24. Dynamic parameters Qr, IRM
versus TVJ
1
K/W
0.1
ZthJC
0.01
1000
nC
800
Qr
600
TVJ= 100°C
VR = 300V
IIFF==
60A
30A
IF= 15A
400
200
0
100 A/μs 1000
-diF/dt
Fig. 22.
Reverse recovery
versus -diF/dt
charge
Qr
90
ns
trr
80
70
VTVRJ==
100°C
300V
IF= 60A
IF= 30A
IF= 15A
IXGH40N120B2D1
IXGT40N120B2D1
30
A
25
IRM
20
TVJ= 100°C
VR = 300V
IIIFFF===
60A
30A
15A
15
10
5
0
0 200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 23.
Peak reverse
versus -diF/dt
current
IRM
20
V
VFR
15
TVJ= 100°C
IF = 30A
tfr
VFR
1.00
μs
tfr
0.75
10 0.50
5 0.25
60
0
200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 25. Recovery time trr versus -diF/dt
0 0.00
0 200 400 600 A80/μ0s 1000
diF/dt
Fig. 26. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation
i
Rth ( °C/W)
ti (s)
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
0.001
0.00001
0.0001
0.001
0.01
Fig. 27. Transient thermal resistance junction to case
© 2009 IXYS CORPORATION, All RrightsRreserved
0.1
DSEP 29-06
s1
t
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IXGH40N120B2D1 | High Voltage IGBTs | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |