|
|
PDF IXGH30N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH30N60B2D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXGH30N60B2D1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
IXGH 30N60B2D1
IXGT 30N60B2D1
VCES
IC25
VCE(sat)
tfi typ
= 600 V
= 70 A
< 1.8 V
= 82 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (M3) (TO-247)
TO-247
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
70 A
30 A
150 A
ICM = 60
A
190
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10Nm/lb.in.
6g
4g
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 24 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 25°C
200 µA
3 mA
±100 nA
1.8 V
TO-247 AD (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z Medium frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
© 2004 IXYS All rights reserved
DS99134A(04/04)
1 page  
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
220
200
180
160
td(off)
tfi - - - - - -
RG = 5Ω
VGE = 15V
VCE = 400V
IC = 12A
24A
48A
140
120
IC = 48A
100 24A
12A
80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
1000
Fig. 15. Capacitance
f = 1 MHz
Cies
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 14. Gate Charge
15
VCE = 300V
12
IC = 24A
IG = 10mA
9
6
3
0
0 10 20 30 40 50 60 70
Q G - nanoCoulombs
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 16. Maxim um Transient Therm al Resistance
1.0
0.5
0.1
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGH30N60B2D1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXGH30N60B2D1 | IGBT | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |