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PDF MUBW20-06A7 Data sheet ( Hoja de datos )
| Número de pieza | MUBW20-06A7 | |
| Descripción | Converter - Brake - Inverter Module | |
| Fabricantes | IXYS | |
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MUBW 20-06 A7
Converter - Brake - Inverter Module (CBI2)
21 22
D11 D13 D15
12 3
7
D7
D12 D14 D16
23
T7
14
24
T1
16
15
T2
11
10
D1 T3
18
6 17
D2 T4
12
D3 T5
20
19
5
D4 T6
13
D5
4
D6
NTC
8
Three Phase
Rectifier
V
RRM
IDAVM
IFSM
= 1600V
= 36 A
= 300 A
Brake Chopper
V = 600 V
CES
IC25 = 25 A
VCE(sat) = 1.9 V
Three Phase
Inverter
V = 600 V
CES
IC25 = 35 A
VCE(sat) = 1.9 V
9
Input Rectifier Bridge D11 - D16
Symbol
VRRM
IFAV
IDAVM
IFSM
Ptot
Conditions
TC = 80°C; sine 180°
TC = 80°C; rectangular; d = 1/3
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
Maximum Ratings
1600
V
25 A
24 A
300 A
100 W
Symbol
V
F
IR
trr
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
F
=
20
A;
TVJ
=
25°C
TVJ = 125°C
VR = VRRM; TVJ = 25°C
TVJ = 125°C
VR = 100 V; IF = 15 A; di/dt = -15 A/µs
(per diode)
1.4 1.6 V
1.3 V
0.15 mA
1.2 mA
1 µs
1.3 K/W
Application: AC motor drives with
q Input from single or three phase grid
q Three phase synchronous or
asynchronous motor
q electric braking operation
Features
q High level of integration - only one power
semiconductor module required for the
whole drive
q Fast rectifier diodes for enhanced EMC
behaviour
q NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
q Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
q Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
q Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
1-8
1 page  
MUBW 20-06 A7
Input Rectifier Bridge D11 - D16
60
A
50
IF
40
TVJ= 125°C
TVJ= 25°C
160
A 50Hz, 80% VRRM
140
120
IFSM
100
TVJ= 45°C
30 80
60
20 TVJ= 125°C
40
10
20
0
0.0 0.4 0.8 1.2 1.6 V 2.0
VF
Fig. 1 Forward current versus voltage
drop per diode
600
W
500
Ptot
400
300
200
0
0.001
0.01
0.1 s
t
Fig. 2 Surge overload current
1
RthA:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
100
103
A2s
I2t
TVJ= 45°C
TVJ= 125°C
102
1
2 3 4 5 6 7 m8 s910
t
Fig. 3 I2t versus time per diode
80
A
60
Id(AV)
40
20
0
0 20 40 60 80 100 120 A 0 20 40 60 80 100 120 140 °C
Id(AV)M
Tamb
Fig. 4 Power dissipation versus direct output current and ambient temperature, sin
180°
1.4
K/W
1.2
0
0 20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus
case temperature
1.0
ZthJC
0.8
0.6
0.4
0.2
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
© 2001 IXYS All rights reserved
DWFN17-16
1 s 10
t
5-8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MUBW20-06A7.PDF ] | |
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