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PDF MUBW35-12A8 Data sheet ( Hoja de datos )
| Número de pieza | MUBW35-12A8 | |
| Descripción | Converter - Brake - Inverter Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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MUBW 35-12 A8
Converter - Brake - Inverter Module (CBI3)
21 22
D11 D13 D15
12 3
D7
7
D12 D14 D16
23
T7
14
24
T1
16
15
T2
11
10
D1 T3
18
6 17
D2 T4
12
D3 T5
20
19
5
D4 T6
13
D5
4
D6 E72873
See outline drawing for pin arrangement
NTC
8
Three Phase
Rectifier
VRRM
I
FAVM
IFSM
= 1600 V
= 42 A
= 300 A
Brake Chopper
VCES = 1200 V
I = 35 A
C25
VCE(sat) = 2.3 V
Three Phase
Inverter
VCES = 1200 V
I = 50 A
C25
VCE(sat) = 2.5 V
9
Input Rectifier D11 - D16
Symbol
VRRM
IFAV
IDAVM
IFSM
Ptot
Conditions
TC = 80°C; sine 180°
TC = 80°C; rectangular; d = 1/3; bridge
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
Maximum Ratings
1600
V
30 A
80 A
300 A
100 W
Symbol
Conditions
VF
I
R
RthJC
IF = 35 A; TVJ = 25°C
TVJ = 125°C
V
R
=
V;
RRM
TVJ
=
25°C
TVJ = 125°C
(per diode)
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.2 1.4 V
1.2 V
0.02 mA
0.4 mA
1.3 K/W
Application: AC motor drives with
● Input from single or three phase grid
● Three phase synchronous or
asynchronous motor
● electric braking operation
Features
● High level of integration - only one power
semiconductor module required for the
whole drive
● NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
● Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
● Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
● Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-8
1 page  
MUBW 35-12 A8
Input Rectifier Bridge D11 - D16
120
A
100
IF
80
TVJ = 125°C
TVJ = 25°C
60
200
A
150
IFSM
100
TVJ= 45°C
103
A2s
I2t
TVJ= 45°C
40
20
0
0.0 0.6 1.2 1.8 V 2.4
VF
Fig. 1 Forward current versus
voltage drop per diode
350
W
300
250
Ptot
200
150
100
50
TVJ= 150°C
50
50Hz, 80% VRRM
0
0.001
0.01
0.1 s
t
1
Fig. 2 Surge overload current
TVJ= 150°C
102
1
2 3 4 5 6 7 m8 9s10
t
Fig. 3 I2t versus time per diode
RthA:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
80
A
70
Id(AV)
60
50
40
30
20
10
0
0
Fig. 4
40 80 120 A 0 20 40 60 80 100 120 140 C
Id(AV)M
Tamb
Power dissipation versus direct output current and ambient temperature, sin 180°
0
0 20 40 60 80 100 120 140 C
TC
Fig. 5 Max. forward current
versus case temperature
K/W
1.2
ZthJC
0.8
0.4
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
© 2007 IXYS All rights reserved
1
s
t
DWN 17
10
20070912a
5-8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MUBW35-12A8.PDF ] | |
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