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PDF IXGK60N60C2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGK60N60C2D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFASTTM
IGBT with Diode
IXGK 60N60C2D1
IXGX 60N60C2D1
C2-Class High Speed IGBTs
V
I CES
VC25
t CE(sat)
fi(typ)
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE ≤ 600 V
TC = 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
60 A
48 A
300 A
ICM = 100
A
480 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 μA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise specified)
Typ. Max.
3.0 5.0 V
TJ = 25°C
TJ = 125°C
650 μA
5 mA
±100 nA
TJ = 25°C
TJ = 125°C
2.1 2.5
1.8
V
V
TO-264 AA
(IXGK)
G
CE
PLUS247
(IXGX)
(TAB)
G = Gate C = Collector
E = Emitter Tab = Collector
(TAB)
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2006 IXYS All rights reserved
DS99044B(11/05)
1 page  
Fig. 13. Inductive Turn-off
Switching Times vs. Junction Temperature
160
t f td(off) - - - -
140 RG = 2Ω , VGE = 15V
VCE = 400V
120
I C = 100A, 50A, 25A
100
200
180
160
140
80 120
60 100
40 80
20 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Inductive Turn-on
Switching Times vs. Collector Current
80
t r td(on) - - - -
70 RG = 2Ω , VGE = 15V
VCE = 400V
60
TJ = 25ºC, 125ºC
30.5
29.0
27.5
50 26.0
40 24.5
30 23.0
20 21.5
10 20.0
20 30 40 50 60 70 80 90 100
IC - Amperes
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 14. Inductive Turn-on
Switching Times vs. Gate Resistance
140
tr
td(on) - - - -
120 TJ = 125ºC, VGE = 15V
VCE = 400V
100
I C = 100A
80
43
40
37
34
60 31
I C = 50A
40 28
20 25
I C = 25A
0 22
2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 16. Inductive Turn-on
Switching Times vs. Junction Temperature
80 34
70 t r
td(on) - - - -
60 RG = 2Ω , VGE = 15V
VCE = 400V
50
I C = 100A
32
30
28
40
I C = 50A
30
26
24
20
10 I C = 25A
22
20
0 18
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 17. Gate Charge
16
14 VCE = 300V
I C = 50A
12 I G = 10 mA
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160
QG - NanoCoulombs
© 2006 IXYS All rights reserved
10,000
1,000
Fig. 18. Capacitance
Cies
Coes
100
Cres
f = 1 MHz
10
0
5 10 15 20 25 30 35 40
VCE - Volts
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGK60N60C2D1.PDF ] | |
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