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PDF P8NM50 Data sheet ( Hoja de datos )
| Número de pieza | P8NM50 | |
| Descripción | STP8NM50 | |
| Fabricantes | STMicroelectronics | |
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STP8NM50
STP8NM50FP
N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STP8NM50
t(s)STP8NM50FP
550V
550V
<0.8Ω
<0.8Ω
8A
8A (1)
c1. Limited only by maximum temperature allowed
du■ 100% avalanche tested
ro■ High dv/dt and avalanche capabilities
P■ Low gate input resistance
te■ Low input capacitance and gate charge
soleDescription
bThe MDmesh™ is a new revolutionary Power
- OMOSFET technology that associates the multiple
)drain process with the company’s PowerMESH™
t(shorizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
ucdv/dt and excellent avalanche characteristics. The
dadoption of the company’s proprietary strip
rotechnique yields overall dynamic performance
Pthat is significantly better than that of similar
competition’s products.
leteApplications
Obso■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STP8NM50
STP8NM50FP
Marking
P8NM50
P8NM50FP
Package
TO-220
TO-220FP
Packaging
Tube
Tube
October 2006
Rev 7
1/14
www.st.com
14
1 page  
STP8NM50 - STP8NM50FP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=250 V, ID=2.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
VDD=400 V, ID=5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min Typ Max Unit
16 ns
8 ns
14 ns
6 ns
13 ns
Table 7. Source drain diode
)Symbol
Parameter
ct(sISD
uISDM
rodVSD
Ptrr
teQrr
IRRM
oletrr
sQrr
Obsolete Product(s) - ObIRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
ISD=10A, VGS=0
ISD=5A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
(see Figure 20)
ISD=5A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
(see Figure 20)
Min Typ Max Unit
8
32
1.5
185
1.1
11.5
270
1.6
12
A
A
V
ns
µC
A
ns
µC
A
5/14
5 Page 
STP8NM50 - STP8NM50FP
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
MIN.
mm.
TYP
MAX.
MIN.
inch
TYP.
MAX.
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.15
1.70 0.045
0.066
c 0.49
0.70 0.019
0.027
D 15.25
15.75
0.60
0.620
E 10
10.40
0.393
0.409
t(s)e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
cF 1.23
1.32 0.048
0.052
uH1 6.20
6.60 0.244
0.256
dJ1 2.40
2.72 0.094
0.107
roL 13
14 0.511
0.551
PL1 3.50
3.93 0.137
0.154
L20 16.40
0.645
teL30 28.90
1.137
leøP 3.75
3.85 0.147
0.151
Obsolete Product(s) - ObsoQ 2.65
2.95 0.104
0.116
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet P8NM50.PDF ] | |
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