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PDF AOL1718 Data sheet ( Hoja de datos )
| Número de pieza | AOL1718 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1718
30V N-Channel MOSFET
SRFET TM
General Description
SRFETTM AOL1718 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON) and low gate charge. This device is
ideally suited for use as a low side switch in CPU core
power conversion.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
30V
90A
< 3mΩ
< 4.3mΩ
100% UIS Tested
100% Rg Tested
UltraSO-8TM
Top View
Bottom View
D
G
S
S
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
90
71
410
21
16
40
80
100
50
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
48
1
Max
25
60
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2: April 2011
www.aosmd.com
Page 1 of 7
1 page  
AOL1718
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
120
TA=25°C
100
TA=100°C
100
80
TA=150°C
60
10 40
TA=125°C
20
1
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
120
100
80
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
100
80 TA=25°C
60 17
5
2
40 10
20
0
0.001 0.01 0.1 1 10 1000 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 2: April 2011
www.aosmd.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AOL1718.PDF ] | |
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