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PDF Si4686DY Data sheet ( Hoja de datos )
| Número de pieza | Si4686DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30-V (D-S) MOSFET
Si4686DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0095 at VGS = 10 V
0.014 at VGS = 4.5 V
ID (A)a
18.2
15
Qg (Typ.)
9.2 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• Extremely Low Qgd WFET® Technology
for Low Switching Losses
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
D
G
Top View
Ordering Information: Si4686DY-T1-E3 (Lead (Pb)-free)
Si4686DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
18.2
14.5
13.8b, c
11b, c
50
4.3
2.5b, c
10
5
5.2
3.3
3.0b, c
1.9b, c
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
t ≤ 10 s
Steady State
Document Number: 73422
S09-0228-Rev. B, 09-Feb-09
Symbol
RthJA
RthJF
Typical
35
20
Maximum
42
24
Unit
°C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 6
16 5
4
12
3
8
2
4
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si4686DY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73422
S09-0228-Rev. B, 09-Feb-09
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si4686DY.PDF ] | |
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