|
|
|
부품번호 | MWI30-06A7 기능 |
|
|
기능 | IGBT Module | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
MWI 30-06 A7
MWI 30-06 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
IC25 = 45 A
VCES
= 600 V
VCE(sat) typ. = 1.9 V
Type:
MWI 30-06 A7
MWI 30-06 A7T
NTC - Option:
without NTC
with NTC
1
2
3
4
17
59
6 10
7 11
8 12
T
16
15
14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
I
GES
td(on)
tr
td(off)
tf
E
on
Eoff
Cies
QGon
RthJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
45
30
VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 60
VCEK ≤ VCES
VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
140 W
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 0.7 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
V = 0 V; V = ± 20 V
CE GE
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = ±15 V; RG = 33 Ω
1.9 2.4 V
2.2 V
4.5 6.5 V
0.6 mA
0.5 mA
200 nA
50 ns
50 ns
270 ns
40 ns
1.4 mJ
1.0 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 30 A
(per IGBT)
1600
150
pF
nC
0.88 K/W
Features
● NPT IGBT technology
● low saturation voltage
● low switching losses
● switching frequency up to 30 kHz
● square RBSOA, no latch up
● high short circuit capability
● positive temperature coefficient for
easy parallelling
● MOS input, voltage controlled
● ultra fast free wheeling diodes
● solderable pins for PCB mounting
● package with copper base plate
Advantages
● space savings
● reduced protection circuits
● package designed for wave soldering
Typical Applications
● AC motor control
● AC servo and robot drives
● power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-4
8
VCE = 300V
mJ VGE = ±15V
6 RG = 33Ω
Eon TVJ = 125°C
4
80
ns
tr
60
td(on)
t
Eon 40
2 20
00
0 20 40 60 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
4
VCE = 300V
mJ VGE = ±15V
Eon
3
IC = 30A
TVJ = 125°C
2
1
td(on)
80
ns
tr 60 t
Eon
40
0
0 10
Fig. 9
20
20 30 40 50 60 70 Ω 80
RG
Typ. turn on energy and switching
times versus gate resistor
80
A
ICM 60
40
20
RG = 33 Ω
TVJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
MWI 30-06 A7
MWI 30-06 A7T
2.0
mJ
Eoff 1.5
1.0
VCE = 300V
VGE = ±15V
RG = 33Ω
TVJ = 125°C
400
Eoff
ns
td(off)
300
t
200
0.5 100
0.0
0
tf
0
20 40 60 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
2.0
mJ
Eoff 1.5
VCE = 300V
VGE = ±15V
IC = 30A
TVJ = 125°C
td(off)
400
ns
300
t
1.0
Eoff
200
0.5 100
0.0
0
tf
0
10 20 30 40 50 60 70 Ω 80
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
diode
IGBT
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
MWI3006A7
1 s 10
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
4-4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ MWI30-06A7.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MWI30-06A7 | IGBT Module | IXYS |
MWI30-06A7T | IGBT Module | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |