|
|
|
부품번호 | MWI50-06A7T 기능 |
|
|
기능 | IGBT Module | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
MWI 50-06 A7
MWI 50-06 A7T
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Type:
MWI 50-06 A7
MWI 50-06 A7T
NTC - Option:
without NTC
with NTC
13
1
2
3
4
17
IC25 = 72 A
V
CES
= 600 V
VCE(sat) typ. = 1.9 V
59
6 10
7 11
8 12
T
16
15
14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
72
50
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 100
VCEK ≤ VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
22
Ω;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
225 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
1.9 2.4 V
2.2 V
4.5 6.5 V
0.6 mA
0.7 mA
200 nA
50 ns
60 ns
300 ns
30 ns
2.3 mJ
1.7 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 50 A
(per IGBT)
2800
120
pF
nC
0.55 K/W
Features
● NPT IGBT technology
● low saturation voltage
● low switching losses
● switching frequency up to 30 kHz
● square RBSOA, no latch up
● high short circuit capability
● positive temperature coefficient for
easy parallelling
● MOS input, voltage controlled
● ultra fast free wheeling diodes
● solderable pins for PCB mounting
● package with copper base plate
Advantages
● space savings
● reduced protection circuits
● package designed for wave soldering
Typical Applications
● AC motor control
● AC servo and robot drives
● power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
1-4
10.0
mJ
td(on)
100
ns
7.5
Eon
5.0
2.5
Eon
0.0
0
40
75
t
tr
VCE = 300V
VGE = ±15V
RG = 22Ω
TVJ = 125°C
50
25
0
80 A 120
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
4
mJ
Eon
3
2
td(on)
80
ns
Eon
60 t
tr
VCE = 300V
VGE = ±15V
IC = 50A
TVJ = 125°C
40
1 20
0 10 20 30 40 50 Ω 60
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
120
A
ICM 90
60
30
RG = 22 Ω
TVJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
MWI 50-06 A7
MWI 50-06 A7T
4 400
mJ
Eoff 3
2
1
Eoff
td(off)
VCE = 300V
VGE = ±15V
RG = 22Ω
TVJ = 125°C
ns
300
t
200
100
tf
00
0 40 80 A 120
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
3
mJ
Eoff
2
1
600
Eoff
td(off)
VCE = 300V
VGE = ±15V
IC = 50A
TVJ = 125°C
ns
400 t
200
0 tf 0
0 10 20 30 40 50 Ω 60
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
diode
IGBT
0.01
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
MWI5006A7
1 s 10
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20070912a
4-4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ MWI50-06A7T.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MWI50-06A7 | IGBT Module | IXYS |
MWI50-06A7T | IGBT Module | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |