|
|
PDF MWI225-12E9 Data sheet ( Hoja de datos )
| Número de pieza | MWI225-12E9 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MWI225-12E9 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
MWI 225-12 E9
IGBT Modules
Sixpack
NPT3 IGBT
15
28 16
17
29 13
14
2
20
21
22
11/12
18
19
1
4
25
26
27
9/10
23
24
3
6
7/8
5
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
TVJ = 25°C to 125°C
TC = 25°C
TC = 80°C
RG = 5 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
VCE = 900 V; VGE = ±15 V; RG = 5 Ω
TVJ = 125°C; non-repetitive; VCEmax < VCES
TC = 25°C
Maximum Ratings
1200
V
± 20 V
355
250
ICM = 500
VCEK < VCES
10
A
A
A
µs
1.4 kW
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 225 A; VGE = 15 V
IC = 8 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 200 A
VGE = ±15 V; RG = 3.6 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 300 A
2.1
2.4
4.5
1
180
100
650
120
13
21
14
1.5
2.5 V
2.9 V
6.5 V
1 mA
8 mA
400 nA
ns
ns
ns
ns
mJ
mJ
nF
µC
0.09 K/W
IC80 = 250 A
VCES = 1200 V
VCE(sat) typ. = 2.1 V
See outline drawing for pin arrangement
Features
• NPT3 IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100421a
1-5
1 page  
MWI 225-12 E9
80
60
E
40
[mJ]
VCE = 600 V
VGE = ±15 V
RG = 3.6 Ω
TVJ = 125°C
240
td(on)
180
tr 120 t
[ns]
50
40
Eoff
30
[mJ]
20
VCE = 600 V
VGE = ±15 V
RG = 3.6 Ω
TVJ = 125°C
1000
800
td(off) 600 t
400 [ns]
20
0
0
100
Eon
Erec(off)
200
IC [A]
300
60
0
400
Fig. 7 Typ.turn on energy and switching times
versus collector current
10
Eoff
tf 200
00
100 200 300 400
IC [A]
Fig. 8 Typ. turn off energy and switching times
versus collector current
120
90
E
60
[mJ]
VCE = 600 V
VGE = ±15 V
IC = 200 A
TVJ = 125°C
400
td(on)
300
tr t
200
[ns]
30
Eon
100
0 Erec(off)
0 10
20
RG [Ω]
30
0
40
Fig. 9 Typ. turn on energy and switching times
versus gate resistor
60
50
40
Eoff
30
[mJ]
20
VCE = 600 V
VGE = ±15 V
IC = 200 A
TVJ = 125°C
Eoff
td(off) 3000
2500
2000
t
1500
[ns]
1000
10 500
tf
00
0 10 20 30 40
RG [Ω]
Fig. 10 Typ. turn off energy and switching times
versus gate resistor
12
10
Erec(off) 8
[mJ]
VR = 600 V
IF = ±15 V
TVJ = 125°C
30 0.20
ZthJC
Qrr
24
0.16
[K/W]
18 Qrr
[nC]
0.12 single pulse
0.08
diode
IGBT
6 12
0.04
4
500
Erec(off)
1000
1500
2000
2500
6
3000
di/dt [A/µs]
Fig. 11 Typ. turn off energy and recovered charge
of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
0.00
1
10
100
1000
10000
t [ms]
Fig. 12 Typ. transient thermal impedance
20100421a
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MWI225-12E9.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MWI225-12E9 | IGBT Module | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |