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PDF MWI450-12E9 Data sheet ( Hoja de datos )
| Número de pieza | MWI450-12E9 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MWI450-12E9 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MWI 450-12 E9
IGBT Modules
Sixpack
15
28 16
17
29 13
14
2
20
21
22
11/12
18
19
1
4
25
26
27
9/10
23
24
3
IC80 = 440 A
VCES = 1200 V
VCE(sat) typ. = 2.2 V
6
7/8
E72873
5 See outline drawing for pin arrangement
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
TVJ = 25°C to 125°C
TC = 25°C
TC = 80°C
RG = 2.7 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
VCE = 900 V; VGE = ±15 V; RG = 2.7 Ω
TVJ = 125°C; non-repetitive; VCEmax < VCES
TC = 25°C
Maximum Ratings
1200 V
± 20 V
640
440
ICM = 900
VCEK < VCES
10
A
A
A
µs
2.2 kW
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 450 A; VGE = 15 V
IC = 18 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 450 A
VGE = ±15 V; RG = 2.7 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 450 A
2.2
2.5
4.5
2.4
6.5
V
V
V
1 mA
6 21 mA
600 nA
190
116
475
100
35
47
33
3.3
0.057
ns
ns
ns
ns
mJ
mJ
nF
µC
K/W
Features
• NPT3 IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100401a
1-5
1 page  
MWI 450-12 E9
60
td(on)
240
50
40 VCE = 600 V
VGE = ±15 V
30 RG = 1.6 Ω
TVJ = 125°C
20
Erec(off)
10
180
tr 120
60
Eon
00
0 100 200 300 400 500 600 700 800 900
IC [A]
Fig. 7 Typ. turn on energy and switching times
versus collector current
300
250
200
VCE = 600 V
VGE = ±15 V
IC = 450 A
TVJ = 125°C
150
100
50
0
0
Erec(off)
5
10 15 20
RG [Ω]
600
td(on)
Eon
tr
500
400
300
200
100
0
25 30
Fig. 9 Typ. turn on energy and switching times
versus gate resistor
35
VR = 600 V
30 IF = ±15 V
TVJ = 125°C
70
65
3.3 Ω
25 60
20
12 Ω
18 Ω
6.8 Ω
Qrr 3.3 Ω
55
12 Ω
15
50
18Ω
10
Erec(off)
5
1000
2000
3000
di/dt [A/µs]
45
40
4000
Fig. 11 Typ. turn off energy and recovered charge
of free wheeling diode
120 600
100 500
80 VCE = 600 V
VGE = ±15 V
60 RG = 1.6 Ω
TVJ = 125°C
40
400
td(off)
300
200
20
0 Eoff
200
400 600
IC [A]
tf
800
100
0
Fig. 8 Typ. turn off energy and switching times
versus collector current
100
90 VCE = 600 V
80
70
VGE = ±15 V
IC = 450 A
TVJ = 125°C
60
50
40 Eoff
30
20
10
0
0 5 10
15 20
RG [Ω]
td(off)
2500
2000
1500
1000
500
tf 0
25 30
Fig. 10 Typ. turn off energy and switching times
versus gate resistor
0.08
diode
0.06
0.04
single pulse
IGBT
0.02
0.00
1
MWI450-12E9
10
100
1000
10000
t [ms]
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
20100401a
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MWI450-12E9.PDF ] | |
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