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PDF MWI225-17E9 Data sheet ( Hoja de datos )
| Número de pieza | MWI225-17E9 | |
| Descripción | IGBT Module | |
| Fabricantes | IXYS | |
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Advanced Technical Information
MWI 225-17E9
IGBT Modules
Sixpack
NPT3 IGBT
IC80 = 235 A
VCES = 1700 V
VCE(sat)typ. = 2.5 V
2 46
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Symbol
VCE(sat)
VGE(th)
I
CES
IGES
td(on)
tr
td(off)
t
f
Eon
E
off
Cies
QGon
RthJC
15
28
16
17
29 13
14
20
21
22
11/12
18
19
1
25
26
27
9/10
23
24
3
7/8
5
Conditions
TVJ = 25°C to 125°C
TC = 25°C
TC = 80°C
RG = 5 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
VCE = 1200 V; VGE = ±15 V; RG = 5 Ω;
TVJ = 125°C; non-repetitive; VCEmax < VCES
TC = 25°C
Maximum Ratings
1700
V
± 20 V
335 A
235 A
ICM = 470
VCEK ≤ VCES
10
A
µs
1.4 kW
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 225 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 20 mA; VGE = VCE
V
CE
=
V;
CES
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 900 V; IC = 200 A
VGE = ±15 V; RG = 5 Ω
2.5 2.9 V
2.9 3.4 V
4.5 6.5 V
0.6 mA
4.4 mA
500 nA
180 ns
110 ns
500 ns
110 ns
66 mJ
54 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 700 V; VGE = 15 V; IC = 200 A
22
1.72
nF
µC
0.085 K/W
E72873
See outline drawing for pin arrangement
Features
€€NPT3 IGBT technology
€€low saturation voltage
€€low switching losses
€€square RBSOA, no latch up
€€high short circuit capability
€€positive temperature coefficient for
easy parallelling
€€MOS input, voltage controlled
€€ultra fast free wheeling diodes
€€solderable pins for PCB mounting
€€package with copper base plate
Advantages
€€space savings
€€reduced protection circuits
€€package designed for wave soldering
Typical Applications
€€AC motor control
€€AC servo and robot drives
€€power supplies
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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