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Número de pieza | 6MBI450U-120 | |
Descripción | IGBT Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 6MBI450U-120 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 6MBI450U-120
IGBT Module U-Series 1200V / 450A 6 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· Uninterruptible power supply
· AC and DC Servo drive amplifier · Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Symbol
Conditions
Rating
Unit
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltaga
VGES
±20 V
Collector current
IC
Continuous Tc=25°C
600 A
Tc=80°C
450
ICp
1ms Tc=25°C
1200
Tc=80°C
900
-IC 450
-IC pulse
900
Collector Power Dissipation
PC 1 device
2080
W
Junction temperature
Tj
+150
°C
Storage temperature
Tstg
-40 to +125
Isolation voltage between terminal and copper base *1 Viso
AC:1min.
2500
VAC
between thermistor and others *2
Screw Torque Mounting *3
-
3.5 N·m
Terminals *4
*1 : All terminals should be connected together when isolation test will be done.
4.5
*2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*3 :Recommendable value : 2.5 to 3.5 N·m(M5) *4 :Recommendable value : 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Characteristics
Unit
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*5
Resistance
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B value
B
*5:Biggest internal terminal resistance among arm.
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=450mA
VGE=15V, IC=450A Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=450A
VGE=±15V
RG=1.1 WW
VVGG EE==00VV
IIF=450A
IF=450A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
T=25°C
T=100°C
T=25/50°C
Min.
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
465
3305
Typ.
–
–
6.5
2.20
2.45
1.75
2.00
50
0.36
0.21
0.03
0.37
0.07
2.05
2.15
1.60
1.70
–
1.0
5000
495
3375
Max.
3.0
600
8.5
2.55
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.35
–
1.90
–
0.35
–
–
520
3450
mA
nA
V
V
nF
µs
V
µs
mWW
WW
KK
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Unit
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*6
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.0167
*6 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
0.06
0.10
–
°C/W
°C/W
°C/W
1 page 6MBI450U-120
Outline Drawings, mm
M629
IGBT Module
Equivalent Circuit Schematic
2
[Inverter]
4
[Thermister]
6
11 9
12 10
7
8
1 35
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 6MBI450U-120.PDF ] |
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