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부품번호 | MKI75-06A7 기능 |
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기능 | IGBT Module | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
MKI 75-06 A7
MKI 75-06 A7T
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
IC25 = 90 A
VCES = 600 V
VCE(sat) =typ. 2.1 V
Type:
MKI 75-06 A7
MKI 75-06 A7T
NTC - Option:
without NTC
with NTC
13
T1 D1 T5 D5
1
T
9
2 10
16
14
T T2 D2 T6 D6
3 11
4 12
17
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
t
SC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
90
60
VGE = ±15 V; RG = 18 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 120
VCEK ≤ VCES
V
CE
=
V;
CES
VGE
=
±15
V;
R
G
=
18
Ω;
TVJ
=
125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
280 W
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
t
d(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
R
thJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 1.5 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 75 A
VGE = ±15 V; RG = 18 Ω
2.1 2.6 V
2.5 V
4.5 6.5 V
1.3 mA
0.9 mA
200 nA
50 ns
50 ns
270 ns
40 ns
3.5 mJ
2.5 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 75 A
(per IGBT)
3200
190
pF
nC
0.44 K/W
B3
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
• UL registered, E 72873
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
• supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-4
MKI 75-06 A7
MKI 75-06 A7T
10.0
100
mJ ns
7.5
Eon
75
td(on)
t
5.0
tr
50
VCE = 300V
VGE = ±15V
2.5 RG = 18Ω 25
TVJ = 125°C
Eon
0.0
0
Fig. 7
0
40 80 120 A 160
IC
Typ. turn on energy and switching
times versus collector current
10
mJ
8
Eon
6
td(on)
tr
100
ns
80
t
60
4
2 Eon
VCE = 300V
VGE = ±15V
IC = 75A
TVJ = 125°C
40
20
00
0 10 20 30 40 50 Ω 60
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
160
A
ICM 120
80
40
RG = 18 Ω
TVJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
5
mJ
4
Eoff
3
2
1
0
0
Fig. 8
500
ns
Eoff 400
t
td(off) 300
VCE = 300V
VGE = ±15V
RG = 18Ω
TVJ = 125°C
200
100
tf 0
40 80 120 A 160
IC
Typ. turn off energy and switching
times versus collector current
B3
5
mJ
4
Eoff
3
td(off)
Eoff
500
ns
400
t
300
2 VCE = 300V 200
VGE = ±15V
IC = 75A
1 TVJ = 125°C 100
0 tf 0
0 10 20 30 40 50 Ω 60
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
single pulse
0.0001
0.00001 0.0001 0.001 0.01
0.1
t
MWI7506A7
1 s 10
Fig. 12 Typ. transient thermal impedance
© 2005 IXYS All rights reserved
4-4
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구 성 | 총 4 페이지수 | ||
다운로드 | [ MKI75-06A7.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MKI75-06A7 | IGBT Module | IXYS |
MKI75-06A7T | IGBT Module | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |