|
|
|
부품번호 | VID50-06P1 기능 |
|
|
기능 | IGBT Modules | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
VDI 50-06P1 VII 50-06P1
VID 50-06P1 VIO 50-06P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
A1
S18
VII
L9
X13
E2 NTC
K10 X15
X16
VID
X15
L9
NTC
X16
F1
IC25 = 42.5 A
VCES
= 600 V
V =CE(sat) typ. 2.4 V
VDI
X15
L9
NTC
X16
T16
B3
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
non-repetitive
42.5
29
60
VCES
10
A
A
A
µs
TC = 25°C
130 W
Symbol
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified)
VJ
min. typ. max.
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.4
2.9
VGE(th)
IC = 0.7 mA; VGE = VCE
4.5
I
CES
V =V ;
CE CES
V = 0 V;
GE
TVJ =
25°C
TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
t
f
Eon
E
off
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = 15/0 V; RG = 33 Ω
50
50
270
40
1.4
1.0
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz
16
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.92
IXYS reserves the right to change limits, test conditions and dimensions.
2.9 V
V
6.5 V
0.6 mA
1.7 mA
100 nA
ns
ns
ns
ns
mJ
mJ
nF
0.96 K/W
K/W
© 2006 IXYS All rights reserved
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
1-4
8
VCE = 300V
mJ VGE = ±15V
6 RG = 33Ω
Eon TVJ = 125°C
4
80
ns
tr
60
td(on)
t
Eon
40
2 20
0 025T60
0 20 40 60 A
IC
Fig. 7 Typ. turn on energy and switching
4
VCE = 300V
mJ VGE = ±15V
Eon
3
IC = 30A
TVJ = 125°C
2
1
td(on)
80
ns
tr 60 t
Eon
40
0 2025T60
0 10 20 30 40 50 60 70 Ω 80
RG
Fig. 9 Typ. turn on energy and switching
80
A
ICM 60
40
20
RG = 33 Ω
TVJ = 125°C
0
25T60
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
VDI 50-06P1 VII 50-06P1
VID 50-06P1 VIO 50-06P1
2,0
mJ
Eoff 1,5
1,0
VCE = 300V
VGE = ±15V
RG = 33Ω
TVJ = 125°C
Eoff
td(off)
400
ns
300
t
200
0,5 100
0,0
0
tf
025T60
20 40 60 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
B3
2,0
VCE = 300 V
mJ VGE = ±15 V
Eoff 1,5 IC = 30 A
TVJ = 125°C
1,0
400
td(off) ns
300
t
Eoff
200
0,5 100
0,0
0
tf
025T60
10 20 30 40 50 60 70Ω 80
RG
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0,1
diode
IGBT
0,01
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01
0,1
t
VDI...50-06P1
1 s 10
Fig. 12 Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ VID50-06P1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VID50-06P1 | IGBT Modules | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |