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부품번호 | VDI75-06P1 기능 |
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기능 | IGBT Modules | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
IC25 = 69 A
VCES
= 600 V
VCE(sat) typ. = 2.3 V
Preliminary data sheet
VIO
A
S
VII
L9
X13
E2 NTC
K10 X15
X16
VID VDI
X15
L9
NTC
X15
L9 T16
NTC
X16
F1
X16
B3
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
VGE
=
±15
V;
R
G
=
22
Ω;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
non-repetitive
69
48
100
VCES
10
A
A
A
µs
TC = 25°C
208 W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.3
2.8
VGE(th)
IC = 1 mA; VGE = VCE
4.5
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V
t
d(on)
tr
td(off)
tf
Eon
Eoff
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 40 A
V
GE
=
15/0
V;
R
G
=
22
Ω
50
55
300
30
1.8
1.4
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz
2.8
RthJC
R
thJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.2
IXYS reserves the right to change limits, test conditions and dimensions.
2.8 V
V
6.5 V
0.8 mA
4.4 mA
100 nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
© 2004 IXYS All rights reserved
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Advantages
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
1-4
VDI 75-06P1 VII 75-06P1
VID 75-06P1 VIO 75-06P1
10,0
mJ
td(on)
100
ns
7,5
Eon
75
tr
5,0 50
VCE = 300 V
VGE = ±15 V
2,5 RG = 22 Ω 25
TVJ = 125°C
Eon
0,0
0
40
042T60
80 A 120
IC
Fig. 7 Typ. turn on energy and switching
t
4
mJ
Eon
3
2
td(on)
Eon
tr
VCE = 300 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
80
ns
60 t
40
1 2042T60
0 10 20 30 40 50 Ω 60
RG
Fig. 9 Typ. turn on energy and switching
120
A
ICM 90
60
RG = 22 Ω
TVJ = 125°C
30
0 42T60
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
4 400
mJ
Eoff 3
2
1
Eoff
td(off)
VCE = 300 V
VGE = ±15 V
RG = 22 Ω
TVJ = 125°C
ns
300
t
200
100
0 t 0f 42T60
0 40 80 A 120
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
B3
3
mJ
Eoff
2
1
VCE = 300 V
VGE = ±15 V
IC = 50 A
TVJ = 125°C
600
Eoff
td(off)
ns
400 t
200
0 t 0f 42T60
0 10 20 30 40 50 Ω 60
RG
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
1
ZthJC
0,1
diode
IGBT
0,01
0,001
single pulse
0,0001
0,00001 0,0001 0,001 0,01
0,1
t
VID...75-06P1
1 s 10
Fig. 12 Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
4-4
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
VDI75-06P1 | IGBT Modules | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |