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NVMS4816N 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NVMS4816N 데이터시트, 핀배열, 회로
NTMS4816N, NVMS4816N
Power MOSFET
30 V, 11 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AECQ101 Qualified and PPAP Capable NVMS4816N
These Devices are PbFree and are RoHS Compliant
Applications
Disk Drives
DCDC Converters
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
9.0
7.2
1.37
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 70°C
ID
6.8
5.4
Power Dissipation
(Note 2)
RqJA
TA = 25°C PD 0.78
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
11
8.8
Power Dissipation
RqJA, t v 10 s(Note 1)
Steady
State
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 12.5 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.04
IDM 33
TTsJtg,
55 to
150
IS 2.7
EAS 78
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
91.5 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
61.3
JunctiontoFoot (Drain)
RqJF
22.5
JunctiontoAmbient – Steady State (Note 2)
RqJA 159.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
10 mW @ 10 V
16 mW @ 4.5 V
ID MAX
11 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4816N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4816NR2G SO8 2500 / Tape & Reel
(PbFree)
NVMS4816NR2G SO8 2500 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 1
1
Publication Order Number:
NTMS4816N/D




NVMS4816N pdf, 반도체, 판매, 대치품
NTMS4816N, NVMS4816N
TYPICAL PERFORMANCE CURVES
1500
1200
Ciss
TJ = 25°C
VGS = 0 V
900
600
Coss
300
0 Crss
0
5 10 15 20 25
DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
30
10
9 QT
20
8 VDS
7
VGS
16
6 12
5 QGS
4
QGD
8
3
24
1
0
ID = 9 A
TJ = 25°C
0
0 4 8 12 16 20
QG, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and
DrainToSource Voltage vs. Total Charge
1000
VDD = 15 V
ID = 1 A
VGS = 10 V
100
10
td(off)
tf
tr
td(on)
11 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
4.5
4 VGS = 0 V
TJ = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0.4 0.5 0.6 0.7
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
10
100 ms
1 ms
1
VGS = 20 V
SINGLE PULSE
0.1 TC = 25°C
10 ms
RDS(on) LIMIT
THERMAL LIMIT
dc
0.010.1
PACKAGE LIMIT
1
10
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
80
ID = 12.5 A
60
40
20
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NVMS4816N

Power MOSFET ( Transistor )

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