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PDF EFC4612R Data sheet ( Hoja de datos )

Número de pieza EFC4612R
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! EFC4612R Hoja de datos, Descripción, Manual

Ordering number : ENA1477B
EFC4612R
N-Channel Power MOSFET
24V, 6A, 45mΩ, Dual EFCP
http://onsemi.com
Features
2.5V drive
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Common-drain type
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (5000mm2×0.8mm)
Ratings
24
±12
6
60
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7064-001
1.26
43
EFC4612R-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Taping Type : TR
Marking
12
TR
Electrical Connection
1
FN
LOT No.
0.65
1
2
43
0.3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
EFCP1313-4CC-037
Rg
2
Rg
3
Rg=200Ω
4
Semiconductor Components Industries, LLC, 2013
July, 2013
O2412 TKIM/10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/8

1 page




EFC4612R pdf
EFC4612R
1.8 PT -- Ta
When mounted on ceramic substrate
1.6 (5000mm2×0.8mm)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14722
No. A1477-5/8

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