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부품번호 | IXDR35N60BD1 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
IXDR 35N60 BD1
IGBT
with optional Diode
High Speed,
Low Saturation Voltage
VCES = 600 V
IC25 = 38 A
V =CE(sat) typ 2.2 V
C ISOPLUS 247TM
G
E
G
C
E
Isolated back surface
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
tSC
(SCSOA)
PC
TJ
Tstg
VISOL
FC
Weight
Symbol
V
(BR)CES
VGE(th)
ICES
I
GES
VCE(sat)
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp =1 ms
VGE= ±15 V, TJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 30 µH
VGE= ±15 V, VCE = 600 V, TJ = 125°C
RG = 10 Ω, non repetitive
TC = 25°C
IGBT
Diode
50/60 Hz RMS; IISOL ≤ 1 mA
mounting force with clip
typical
Maximum Ratings
600 V
600 V
±20 V
±30 V
38 A
24 A
48 A
ICM = 110
VCEK < VCES
10
A
µs
125
50
-55 ... +150
-55 ... +150
2500
20...120
6
W
W
°C
°C
V~
N
g
Conditions
V =0V
GE
IC = 0.7 mA, VCE = VGE
VCE = VCES
V = 0 V, V = ± 20 V
CE GE
IC = 35 A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
3 5V
TJ = 25°C
TJ = 125°C
0.1 mA
1 mA
± 500 nA
2.2 2.7 V
Features
● NPT IGBT technology
● low switching losses
● low tail current
● no latch up
● short circuit capability
● positive temperature coefficient for
easy paralleling
● MOS input, voltage controlled
● optional ultra fast diode
● Epoxy meets UL 94V-0
● Isolated and UL registered E153432
Advantages
● DCB Isolated mounting tab
● Meets TO-247AD package Outline
● Package for clip or spring mounting
● Space savings
● High power density
Typical Applications
● AC motor speed control
● DC servo and robot drives
● DC choppers
● Uninterruptible power supplies (UPS)
● Switch-mode and resonant-mode
power supplies
IXYS reserves the right to change limits, test conditions and dimensions
© 2006 IXYS All rights reserved
1-4
IXDR 35N60 BD1
4
mJ
Eon 3
VCE = 300V
VGE = ±15V
RG = 10Ω
TJ = 125°C
2
1
td(on)
Eon
tr
80
ns
60
t
40
20
00
10 20 30 40 50 60 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
2.0
mJ
Eon 1.5
1.0
td(on)
Eon
tr
60
ns
45
t
30
0.5
0.0
05
Fig. 9
VCE = 300V
VGE = ±15V 15
IC = 35A
TJ = 125°C
0
10 15 20 25 30 35 Ω 40
RG
Typ. turn on energy and switching
times versus gate resistor
120
A
100
ICM 80
60
40
20
RG = 10Ω
TJ = 125°C
0
0 100 200 300 400 500 600 700 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
2.0
mJ
Eoff 1.5
1.0
0.5
td(off)
Eoff
tf
400
ns
300
t
VCE = 300V
VGE = ±15V
RG = 10Ω
TJ = 125°C
200
100
0.0 0
10 20 30 40 50 60
IC A
Fig. 8 Typ. turn off energy and switching
times versus collector current
2.0
mJ
Eoff 1.5
VCE = 300V
VGE = ±15V
IC = 35A
TJ = 125°C
1.0
800
td(off)
ns
600
t
Eoff
400
0.5 200
tf
0.0 0
0 5 10 15 20 25 30 35 Ω 40
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
0.01
single pulse
diode
IGBT
0.001
0.0001
10-5
10-4
10-3
10-2
10-1
t
IXDR30N60BD1
100 s 101
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions
© 2006 IXYS All rights reserved
4-4
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ IXDR35N60BD1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IXDR35N60BD1 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |