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PDF ATP216 Data sheet ( Hoja de datos )
| Número de pieza | ATP216 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : EN8985A
ATP216
N-Channel Power MOSFET
50V, 35A, 23mΩ, Single ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=17mΩ(typ.)
• 1.8V drive
• Protection diode in
• Slim package
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=18A
*2 L≤100μH, Single pulse
EAS
IAV
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
50
±10
35
105
40
150
--55 to +150
40
17.5
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP216-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP216
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/51111PA TKIM TC-00002591 No.8985-1/7
1 page  
Taping Specification
ATP216-TL-H
ATP216
No.8985-5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ATP216.PDF ] | |
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