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부품번호 | HAF1008L 기능 |
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기능 | Silicon P Channel MOS FET Series Power Switching | ||
제조업체 | Renesas | ||
로고 | |||
HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z
Rev.1.00
May.13.2003
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (-4 to -6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Tempe-
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
1
2
3
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Rev.1.00, May.13.2003, page 1 of 11
HAF1008(L), HAF1008(S)
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
-500
-200
-100
Maximum Safe Operation Area
Thermal shut down
operation area
-50
-20
-10
-5
-2
-1
Operation
in this area
is limited by
DC OperaPtioWn
RDS(on)
100
1 ms
µs
=(T1c0=m2s5°C)
-0.5 Ta = 25°C
-0.3
-0.5 -1 -2 -5 -10 -20 -50 -100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
-50
-10 V
-40
-8 V
-6 V
-30 -5 V
-4 V
-20
VGS = -3.5 V
-10
Pulse Test
0 -2 -4 -6 -8 -10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
-20
-16
-12
-8
Tc = -25°C
-4 25°C
75°C
V DS = -10 V
Pulse Test
0 -1 -2 -3 -4 -5
Gate to Source Voltage VGS (V)
Rev.1.00, May.13.2003, page 4 of 11
4페이지 HAF1008(L), HAF1008(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
-20
Shutdown Case Temperature vs.
Gate to Source Voltage
200
-15
-10
V DD= -24 V
-5
-16 V
0
100 µ
1m
10 m
Shutdown Time of Load-Short Test
Pw (S)
180
160
140
120 I D = -5 A
100
0 -2 -4 -6 -8 -10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 2.50°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Rev.1.00, May.13.2003, page 7 of 11
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ HAF1008L.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HAF1008 | Silicon P Channel MOS FET Series Power Switching | Renesas |
HAF1008L | Silicon P Channel MOS FET Series Power Switching | Renesas |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |