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부품번호 | HY1707MF 기능 |
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기능 | N-Channel Enhancement Mode MOSFET | ||
제조업체 | HOOYI | ||
로고 | |||
HY1707P/M/B/I/MF/PS/PM
Features
• 70V/80A,
RDS(ON)= 6mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
DS
G
TO-262-3L
Applications
• Power Management for Inverter Systems.
DS
G
TO-220MF-3L
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P MB I
HY1707 HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
MF PS PM
HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
151015
HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics
Power Dissipation
Drain Current
240
100
200 limited by package
80
160
120
80
60
40
40
T =25oC
0C
0 20 40 60 80 100 120 140 160 180 200
20
T =25oC,V =10V
CG
0 20 40 60 80 100 120 140 160 180 200
Tc - Case Temperature (°C)
Tc- Case Temperature (°C)
Safe Operation Area
400
100
10
100us
1ms
10ms
DC
1
T =25oC
0.1 C
0.1
1
10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
10
Duty = 0.5
0.2
1
0.1
0.05
0.1
0.02
0.01
0.01
Single
0.001
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
Mounted on minimum pad
R :62.5o C/W
θJA
1
10
4 www.hooyi.cc
4페이지 HY1707P/M/B/I/MF/PS/PM
Avalanche Test Circuit and Waveforms
DUT
VDS L
RG
tp
VDD
IL
0.01Ω
tp
IAS
VDSX(SUS)
tAV
VDS
EAS
VDD
Switching Time Test Circuit and Waveforms
DUT
VGS
RG
tp
VDS
RD
VDD
VDS
90%
10%
VGS
td(on) tr
td(off) tf
7 www.hooyi.cc
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ HY1707MF.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HY1707M | N-Channel Enhancement Mode MOSFET | HOOYI |
HY1707MF | N-Channel Enhancement Mode MOSFET | HOOYI |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |