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부품번호 | RZE002P02 기능 |
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기능 | 1.2V Drive Pch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 5 페이지수
1.2V Drive Pch MOSFET
RZE002P02
zStructure
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Souce current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−20
±10
±200
±800
−100
−800
150
150
−55 to +150
zDimensions (Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
1.0
0.15
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : YK
zInner circuit
(3)
∗2
(2)
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
Unit
°C/W
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○c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A
RZE002P02
1.0
VDS= -10V
Pulsed
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1
VGS=0V
Pulsed
0.1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
0.5 1 1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Data Sheet
5
Ta=25°C
Pulsed
4
ID= -0.2A
3
ID= -0.01A
2
1
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
td(off)
tf
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10Ω
Pulsed
10
1
0.01
tr
td(on)
0.1
DRAIN-CURRENT : -ID[A]
Fig.13 Switching Characteristics
1
5
4
3
2
Ta=25°C
VDD= -10V
1 VGS=-0.2V
RG=10Ω
Pulsed
0
0 0.5 1 1.5
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
1000
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
10
Coss
Crss
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
zMeasurement circuit
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.A
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부품번호 | 상세설명 및 기능 | 제조사 |
RZE002P02 | 1.2V Drive Pch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |