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Número de pieza | EM6K33 | |
Descripción | 1.2V Drive Nch + Nch MOSFET | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EM6K33 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! 1.2V Drive Nch + Nch MOSFET
EM6K33
Structure
ilicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(EMT6).
3) Ultra low voltage drive(1.2V drive).
Dimensions (Unit : mm)
SOT-563
Application
Switching
Packaging specifications
Package
Taping
Type Code
T2R
Basic ordering unit (pieces) 8000
EM6K33
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Abbreviated symbol : K33
Inner circuit
(6) (5)
(4)
∗1
∗2
∗2
(1) Tr1 Source
∗1 (2) Tr1 Gate
(1) (2)
(3) Tr2 Drain
(3) (4) Tr2 Source
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
50
8
200
800
125
800
PD *2
150
120
Tch 150
Tstg 55 to +150
V
V
mA
mA
mA
mA
mW / TOTAL
mW / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Symbol
Channel to ambient
Rth (ch-a)*
Limits
833
1042
Unit
°C / W /TOTAL
°C / W /ELEMENT
* Each terminal mounted on a recommended land.
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.03 - Rev.B
1 page EM6K33
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
Data Sheet
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
○c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.03 - Rev.B
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EM6K33.PDF ] |
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