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PDF R6006ANX Data sheet ( Hoja de datos )
| Número de pieza | R6006ANX | |
| Descripción | Nch 600V 6A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R6006ANX
Nch 600V 6A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
1.2W
6A
40W
lOutline
TO-220FM
(1)(2)(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
500
-
Marking
R6006ANX
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25C
Tc = 100C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
6
2.9
24
30
2.4
1.9
3
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
C
C
V/ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.01 - Rev.B
1 page  
R6006ANX
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Data Sheet
Fig.2 Maximum Safe Operating Area
100
10
Operation in this
area is limited
by RDS(ON)
1 PW = 100us
PW = 1ms
0.1 PW = 10ms
Ta = 25ºC
Single Pulse
0.01
0.1 1
10
100 1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01 1 100
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.01 - Rev.B
5 Page 
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS = 0V
Pulsed
10
Ta = 125ºC
Ta = 75ºC
1
Ta = 25ºC
Ta = -25ºC
0.1
0.01
0
0.5 1 1.5
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
100
10
0.1
Ta = 25ºC
di / dt = 100A / μs
VGS = 0V
Pulsed
1 10
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/13
2012.01 - Rev.B
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R6006ANX.PDF ] | |
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