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부품번호 | RCX050N25 기능 |
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기능 | 10V Drive Nch MOSFET | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 7 페이지수
RCX050N25
Data Sheet
10V Drive Nch MOSFET
RCX050N25
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Application
Switching
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCX050N25
Bulk
-
500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
5
IDP *1,3
IS
20
5
ISP *1
20
IAS *2
2.5
EAS *2
1.82
PD *4
30
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c*)
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
4.16
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
RCX050N25
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
10
1
Ta= 125°C
0.1 Ta= 75°C
Ta= 25°C
Ta= -25°C
0.01
0.01
0.1 1
Drain Current : ID [A]
10
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
3000
2500
2000
Ta=25°C
Pulsed
ID=2.5A
ID=5.0A
1500
1000
500
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
15
Ta=25°C
VDD=125V
ID=5A
Pulsed
10
5
0
0 5 10 15 20
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
1 Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.0
0.5 1.0
Source-Drain Voltage : VSD [V]
1.5
10000
1000
100
10
Fig.10 Switching Characteristics
td(off)
tf
VDD≒125V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
td(on)
tr
1
0.01
0.1 1
Drain Current : ID [A]
10
1000
Fig.12 Typical Capacitance vs. Drain-Source Voltage
100
Ciss
Coss
10
Ta=25°C
Crss
f=1MHz
VGS=0V
1
0.01
0.1
1
10 100 1000
Drain-Source Voltage : VDS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.10 - Rev.A
4페이지 Notes
Notice
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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RCX050N25 | 10V Drive Nch MOSFET | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |