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Datasheet QS8K2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | QS8K2 | 30V Nch +Nch Middle Power MOSFET QS8K2
30V Nch +Nch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 54mΩ ±3.5A 1.5W
lFeatures
1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
|  ROHM Semiconductor | mosfet |
| 2 | QS8K21 | 4V Drive Nch Nch MOSFET
4V Drive Nch + Nch MOSFET
QS8K21
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive).
(1) (2)
(3) (4)
Abbreviated symbol : K21
Application | ROHM Semiconductor | mosfet |
QS8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | QS8J1 | 1.5V Drive PchPch MOSFET
QS8J1
Transistors
1.5V Drive Pch+Pch MOSFET
QS8J1
zStructure Silicon P-channel MOSFET zDimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
zFeatures 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package.
(1) (2) (3) (4)
zApplications Switching
Abbreviated symbo ROHM Semiconductor mosfet | | |
| 2 | QS8J2 | -12V Pch + Pch Middle Power MOSFET QS8J2
-12V Pch + Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-12V 36mΩ ±4A 1.5W
lFeatures
1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8) 5) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
� ROHM Semiconductor mosfet | | |
| 3 | QS8J4 | 4V Drive Pch Pch MOSFET
4V Drive Pch + Pch MOSFET
QS8J4
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive).
(1) (2)
(3) (4)
Abbreviated symbol : J04
Application S ROHM Semiconductor mosfet | | |
| 4 | QS8J5 | 4V Drive Pch Pch MOSFET
4V Drive Pch + Pch MOSFET
QS8J5
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive).
(1) (2)
(3) (4)
Abbreviated symbol : J05
Application S ROHM Semiconductor mosfet | | |
| 5 | QS8K2 | 30V Nch +Nch Middle Power MOSFET QS8K2
30V Nch +Nch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 54mΩ ±3.5A 1.5W
lFeatures
1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
ROHM Semiconductor mosfet | | |
| 6 | QS8K21 | 4V Drive Nch Nch MOSFET
4V Drive Nch + Nch MOSFET
QS8K21
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive).
(1) (2)
(3) (4)
Abbreviated symbol : K21
Application ROHM Semiconductor mosfet | | |
| 7 | QS8M11 | Power MOSFET, Transistor UNISONIC TECHNOLOGIES CO., LTD
QS8M11
Preliminary
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
Power MOSFET
DESCRIPTION
The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc.
The UTC QS8M11 is suitable for switching.
FEATURES
* N-Channel: 30V  Unisonic Technologies mosfet | |
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