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STT6N3LLH6 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STT6N3LLH6
기능 N-channel Power MOSFET
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STT6N3LLH6 데이터시트, 핀배열, 회로
STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™
Power MOSFET in a SOT23-6L package
Datasheet - production data
4
5
6
3
2
1
SOT23-6L
Features
Order code
STT6N3LLH6
VDSS RDS(on) max ID PTOT
0.025 Ω
(VGS= 10 V)
30 V
6 A 1.6 W
0.036 Ω
(VGS= 4.5 V)
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Figure 1. Internal schematic diagram
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
Order code
STT6N3LLH6
Table 1. Device summary
Marking
Package
STG1
SOT23-6L
Packaging
Tape and reel
March 2014
This is information on a product in full production.
DocID023012 Rev 3
1/12
www.st.com




STT6N3LLH6 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STT6N3LLH6
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. Static
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
V(BR)DSS Voltage
Zero gate voltage drain
IDSS current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS(th) Gate threshold voltage
Static drain-source on-
RDS(on) resistance
ID = 250 μA, VGS= 0
VDS = 30 V
VDS = 30 V, Tc = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 3 A
VGS = 4.5 V, ID = 3 A
30 V
1 μA
10 μA
±100 nA
1V
0.021 0.025 Ω
0.032 0.036 Ω
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
VDS = 24 V, f=1 MHz,
VGS = 0
VDD = 10 V, ID = 6 A
VGS = 4.5 V
Figure 14
Min. Typ. Max. Unit
- 283 - pF
- 61 - pF
- 31 - pF
- 3.6 - nC
- 1.5 - nC
- 1.1 - nC
Symbol
Table 6. Switching on/off (inductive load)
Parameter
Test conditions
Min. Typ.
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 4.8
VDD = 10 V, ID = 3 A,
- 11.2
RG = 4.7 Ω, VGS = 4.5 V
Figure 13
- 9.4
- 5.4
Max. Unit
- ns
- ns
- ns
- ns
4/12 DocID023012 Rev 3

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STT6N3LLH6 전자부품, 판매, 대치품
STT6N3LLH6
Electrical characteristics
Figure 8. Capacitance variations
C
(pF) f= 1 MHz
100
10
AM15370v1
Ciss
Coss
Crss
1
0 10 20 VDS(V)
Figure 9. Normalized on-resistance vs
temperature
RDS(on)
(norm)
1.8
1.6
1.4
ID= 3 A
VGS= 10 V
AM15360v1
1.2
1
0.8
0.6
0.4
0.2
00
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized V(BR)DSS vs temperature
temperature
VGS(th)
(norm)
1.2
1
0.8
0.6
0.4
ID =250 µA
AM15368v1
V(BR)DSS
(norm)
1.15
1.1
1.05
1
0.95
0.9
ID = 1mA
AM15364v1
0.2 0.85
0
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
0.8
-55 -30 -5 20 45 70 95 120 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
AM15365v1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
TJ=-55°C
TJ=150°C
24
6
TJ=25°C
8 10 ISD(A)
DocID023012 Rev 3
7/12
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STT6N3LLH6

N-channel Power MOSFET

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