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STU1HN60K3 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STU1HN60K3
기능 N-CHANNEL POWER MOSFET
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STU1HN60K3 데이터시트, 핀배열, 회로
STD1HN60K3, STU1HN60K3
N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET
in DPAK and IPAK packages
Datasheet production data
TAB
3
1
DPAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS
STD1HN60K3
600 V
STU1HN60K3
RDS(on)
max
8Ω
ID PTOT
1.2 A 27 W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Applications
Switching applications
G(1)
S(3)
AM01476v1
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Order codes
STD1HN60K3
STU1HN60K3
Table 1. Device summary
Marking
Package
1HN60K3
DPAK
IPAK
Packaging
Tape and reel
Tube
April 2013
This is information on a product in full production.
DocID024422 Rev 1
1/19
www.st.com
19




STU1HN60K3 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STD1HN60K3, STU1HN60K3
(Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 0.6 A
Min. Typ. Max. Unit
600 V
1 µA
50 µA
±10 µA
2 3.75 4.5 V
6.7 8 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
- 140 - pF
- 13 - pF
- 2 - pF
Co(tr) (1)
Co(tr) (2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 480 V, VGS = 0
- 9 - pF
- 6 - pF
Rg Gate input resistance f=1 MHz open drain
Qg Total gate charge
VDD = 480 V, ID = 1.2 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
- 10 - Ω
- 9.5 - nC
- 1.5 - nC
- 6.5 - nC
1. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
2. Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/19 DocID024422 Rev 1

4페이지










STU1HN60K3 전자부품, 판매, 대치품
STD1HN60K3, STU1HN60K3
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
10
VVDDS S
VDS=480V
ID=1.2A
AM15652v1
VDS
(V)
500
8 400
Figure 9. Capacitance variations
C
(pF)
AM15653v1
Ciss
100
6 300
4 200
2 100
00
0 2 4 6 8 Qg(nC)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
AM15654v1
ID=50µA
1.00
10
Coss
1
0.1 1
Crss
10 100 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
ID=0.6 A
VGS=10 A
AM15655v1
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75 -50 -25 0 25 50 75 100 125
TJ(°C)
0
-75 -50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Output capacitance stored energy
VSD (V)
0.95
TJ=-50°C
AM15656v1
0.90
0.85
TJ=25°C
0.80
0.75
0.70
0.65 TJ=150°C
0.60
0.55
0.50
0.6 0.7 0.8 0.9 1 1.1 1.2 ISD(A)
Eoss(µJ)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
AM15657v1
200 400 600 VDS(V)
DocID024422 Rev 1
7/19

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STU1HN60K3

N-CHANNEL POWER MOSFET

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STMicroelectronics

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